IKW08T120 is an Infineon (Infineon) 1200 V, 8 A IGBT discrete device with anti-parallel diodes. It is an agent for sales of Infineon (Infineon)'s full range of IC electronic components - TOPCHIP ELECTRONICS provides you with a detailed explanation of the technical parameters of IKW08T120 and Application fields and other contents.
Detailed explanation of IKW08T120 technical parameters
Series: TrenchStop
IGBT types: NPT, channel and field cutoff
Voltage - collector-emitter breakdown (maximum): 1200V
Current - Collector (Ic) (max): 16A
Current - Collector Pulsed (Icm): 24A
Vce(on) at different Vge and Ic: 2.2V @ 15V, 8A
Power - Max: 70W
Switching Energy：1.37mJ
Input type: standard
Gate Charge: 53nC
Td (on/off) value at 25°C: 40ns/450ns
Test Condition: 600V, 8A, 81 Ohm, 15V
Reverse recovery time (trr): 80ns
Package/casing: TO-247-3
Mounting type: Through hole
Supplier device package: PG-TO247-3
IKW08T120 features
Lowest V CEsat drop reduces conduction losses
Low switching losses
Due to the positive temperature coefficient of V CEsat, parallel switching functions can be easily implemented
Very Soft, Fast Recovery Anti-Parallel Emitter Controlled HE Diodes
High durability, temperature stable performance
Low EMI emissions
low gate charge
The parameter distribution is very tight
IKW08T120 application fields
Motor control and driver
Uninterruptible power supply (UPS)
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