HSG1002VE-TL-E

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Manufacturer Part
HSG1002VE-TL-E
Manufacturer
Rochester Electronics
Description
RF 0.035A C BAND GERMANIUM NPN
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
519687
Datasheets
-

HSG1002VE-TL-E Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):3.5V
  • Frequency - Transition:38GHz
  • Noise Figure (dB Typ @ f):0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
  • Gain:8dB ~ 19.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 2V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, Gull Wing
  • Supplier Device Package:4-MFPAK

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