MZ0912B50Y,114

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Manufacturer Part
MZ0912B50Y,114
Manufacturer
Rochester Electronics
Description
RF TRANSISTOR
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
1
Datasheets
-

MZ0912B50Y,114 Specifications

  • Series:-
  • Package:Tray
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):20V
  • Frequency - Transition:1.215GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:8dB
  • Power - Max:150W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:-
  • Current - Collector (Ic) (Max):3A
  • Operating Temperature:-
  • Mounting Type:Chassis Mount
  • Package / Case:SOT-443A
  • Supplier Device Package:CDFM2

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