BFP182WE6327

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Manufacturer Part
BFP182WE6327
Manufacturer
Rochester Electronics
Description
RF TRANSISTOR, L BAND, NPN
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
27000
Datasheets
-

BFP182WE6327 Specifications

  • Series:-
  • Package:Bulk
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain:22dB
  • Power - Max:250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:70 @ 10mA, 8V
  • Current - Collector (Ic) (Max):35mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-82A, SOT-343
  • Supplier Device Package:PG-SOT343-4

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Inquiry

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