MT3S113(TE85L,F)

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Manufacturer Part
MT3S113(TE85L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 5.3V 12.5GHZ SMINI
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
5819
Datasheets
-

MT3S113(TE85L,F) Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5.3V
  • Frequency - Transition:12.5GHz
  • Noise Figure (dB Typ @ f):1.45dB @ 1GHz
  • Gain:11.8dB
  • Power - Max:800mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:S-Mini

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