BFU660F,115

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Manufacturer Part
BFU660F,115
Manufacturer
NXP Semiconductors
Description
RF TRANS NPN 5.5V 21GHZ 4DFP
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
5949
Datasheets
-

BFU660F,115 Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):5.5V
  • Frequency - Transition:21GHz
  • Noise Figure (dB Typ @ f):0.6dB ~ 1.2dB @ 1.5GHz ~ 5.8GHz
  • Gain:12dB ~ 21dB
  • Power - Max:225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:90 @ 10mA, 2V
  • Current - Collector (Ic) (Max):60mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SOT-343F
  • Supplier Device Package:4-DFP

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