MT3S20TU(TE85L)

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Manufacturer Part
MT3S20TU(TE85L)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 12V 7GHZ UFM
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
2871
Datasheets
-

MT3S20TU(TE85L) Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.45dB @ 20mA, 5V
  • Gain:12dB
  • Power - Max:900mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 50mA, 5V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, Flat Lead
  • Supplier Device Package:UFM

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