MT3S111P(TE12L,F)

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Manufacturer Part
MT3S111P(TE12L,F)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS NPN 6V 8GHZ PW-MINI
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
7857
Datasheets
-

MT3S111P(TE12L,F) Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):6V
  • Frequency - Transition:8GHz
  • Noise Figure (dB Typ @ f):1.25dB @ 1GHz
  • Gain:10.5dB
  • Power - Max:1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 30mA, 5V
  • Current - Collector (Ic) (Max):100mA
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:PW-MINI

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