HN3C10FUTE85LF

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Manufacturer Part
HN3C10FUTE85LF
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
RF TRANS 2 NPN 12V 7GHZ US6
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
111
Datasheets
-

HN3C10FUTE85LF Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Active
  • Transistor Type:2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max):12V
  • Frequency - Transition:7GHz
  • Noise Figure (dB Typ @ f):1.1dB @ 1GHz
  • Gain:11.5dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 20mA, 10V
  • Current - Collector (Ic) (Max):80mA
  • Operating Temperature:-
  • Mounting Type:Surface Mount
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:US6

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