Toshiba launches new generation silicon carbide MOSFET to reduce switching losses and improve equipment efficiency

 On August 31, Toshiba announced the launch of a new silicon carbide (SiC) MOSFET product line called the "TWxxxZxxxC Series" designed to support industrial equipment applications. This series of products includes five models with a rated voltage of 650V and five models with a rated voltage of 1200V, all of which will start shipping in volume today. These products use Toshiba's latest 3rd generation silicon carbide MOSFET chips and are packaged in a 4-pin TO-247-4L(X) package to reduce switching losses.

Toshiba launches new generation silicon carbide MOSFET

The packages of the new TWxxxZxxxC series support the use of Kelvin connections at the gate drive signal source terminal, which helps reduce the effect of source line inductance within the package, thereby improving high-speed switching performance. Compared with Toshiba's current products in the 3-pin TO-247 package, the new TWxxxZxxxC series has a turn-on loss reduction of approximately 40% and a turn-off loss reduction of approximately 34%. This improvement will help reduce equipment power losses and increase equipment efficiency.

Toshiba also released a 3-phase inverter reference design using the new SiC MOSFET on its official website to help users better use this new product in their applications. Toshiba said it will continue to expand its product line to further adapt to market trends and help users improve equipment efficiency and expand power capacity.

This new SiC MOSFET can be used in many fields, including switching power supplies (such as servers, data centers, communication equipment, etc.), electric vehicle charging stations, photovoltaic inverters, and uninterruptible power supplies (UPS). The product has the following features: adopts 4-pin TO-247-4L(X) package, gate drive signal source terminal uses Kelvin connection, which can reduce switching loss; adopts third-generation silicon carbide MOSFET technology; has low drain-source conduction Features such as resistance and low diode forward voltage.

Toshiba's next-generation SiC MOSFET product family will bring higher efficiency and lower power loss to industrial equipment applications, helping to promote the development and progress of the industrial field.

 

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