ROHM releases 13 Nch MOSFETs with ultra-low on-resistance

Recently, globally renowned semiconductor manufacturer ROHM released 13 Nch MOSFETs with ultra-low on-resistance, which are very suitable for driving applications powered by 24V, 36V, and 48V power supplies, such as power supplies for base stations and servers, and motors for industrial and consumer electronics equipment.

New product advantages:

1. The HSOP8 package and HSMT8 package, which are connected by low resistance copper clips, have achieved an industry ultra-low conduction resistance (Ron) of only 2.1m Ω. Compared to previous products, the conduction resistance has been reduced by 50%.

2. By improving the gate structure, Qgd * 3 (gate drain charge, usually with a trade-off relationship with conduction resistance) has also been reduced by about 40% compared to previous products (Ron and Qgd are both comparisons between HSOP8 packaged products with a voltage resistance of 60V). This can reduce switch losses and conduction losses, which is very helpful for the efficient operation of various application products. For example, when comparing power efficiency on the power evaluation board for industrial equipment, the new product achieves industry high power efficiency (up to about 95% at peak) within the output current range during steady-state operation.

In the future, ROHM will continue to develop MOSFETs with lower conduction resistance, contributing to social issues such as environmental protection by helping various devices reduce power consumption and become more energy-efficient.

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