FF200R12KE3HOSA1

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Manufacturer Part
FF200R12KE3HOSA1
Manufacturer
IR (Infineon Technologies)
Description
IGBT MODULE 1200V 1050W
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Modules
Series
-
In Stock
705
Datasheets
-

FF200R12KE3HOSA1 Specifications

  • 55b18700f05822c99215921d3c8583b7:Active
  • IGBT Type:-
  • Configuration:2 Independent
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):-
  • Power - Max:1050 W
  • Vce(on) (Max) @ Vge, Ic:2.15V @ 15V, 200A
  • Current - Collector Cutoff (Max):5 mA
  • Input Capacitance (Cies) @ Vce:14 nF @ 25 V
  • Input:Standard
  • NTC Thermistor:Yes
  • Operating Temperature:-40°C ~ 125°C
  • Mounting Type:Chassis Mount
  • Package / Case:Module
  • Supplier Device Package:Module

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