SQUN700E-T1_GE3 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:2 N-Channel (Dual), P-Channel
• FET Feature:Standard
• Drain to Source Voltage (Vdss):200V, 40V
• Current - Continuous Drain (Id) @ 25°C:16A (Tc), 30A (Tc)
• Rds On (Max) @ Id, Vgs:9.2mOhm @ 9.8A, 10V, 75mOhm @ 5A, 10V, 30mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id:3.5V @ 250µA, 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V, 11nC @ 10V, 30.2nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:1474pF @ 20V, 600pF @ 100V, 1302pF @ 100V
• Power - Max:50W (Tc), 48W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:Die
• Supplier Device Package:Die