SI6562CDQ-T1-BE3 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N and P-Channel
• FET Feature:Standard
• Drain to Source Voltage (Vdss):20V
• Current - Continuous Drain (Id) @ 25°C:5.7A (Ta), 6.7A (Tc), 5.1A (Ta), 6.1A (Tc)
• Rds On (Max) @ Id, Vgs:22mOhm @ 5.7A, 4.5V, 30mOhm @ 5.1A, 4.5V
• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:23nC @ 10V, 51nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds:850pF @ 10V, 1200pF @ 10V
• Power - Max:1.1W (Ta), 1.6W (Tc), 1.2W (Ta), 1.7W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Package / Case:8-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package:8-TSSOP