GT50JR21(STA1,E,S)

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Manufacturer Part
GT50JR21(STA1,E,S)
Manufacturer
Toshiba Electronic Devices and Storage Corporation
Description
PB-F IGBT / TRANSISTOR TO-3PN(OS
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
20529
Datasheets
-

GT50JR21(STA1,E,S) Specifications

  • 55b18700f05822c99215921d3c8583b7:Active
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):-
  • Current - Collector (Ic) (Max):-
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:-
  • Power - Max:-
  • Switching Energy:-
  • Input Type:-
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-

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