WG50N65DHWQ

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Manufacturer Part
WG50N65DHWQ
Manufacturer
WeEn Semiconductors Co., Ltd
Description
IGBT TRENCH FD ST 650V 91A TO247
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
51272
Datasheets
-

WG50N65DHWQ Specifications

  • 55b18700f05822c99215921d3c8583b7:Active
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):91 A
  • Current - Collector Pulsed (Icm):200 A
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 50A
  • Power - Max:278 W
  • Switching Energy:1.7mJ (on), 600µJ (off)
  • Input Type:Standard
  • Gate Charge:160 nC
  • Td (on/off) @ 25°C:66ns/163ns
  • Test Condition:400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr):105 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247-3

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