AIKW50N65RF5XKSA1

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Manufacturer Part
AIKW50N65RF5XKSA1
Manufacturer
IR (Infineon Technologies)
Description
SIC_DISCRETE
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
9779
Datasheets
-

AIKW50N65RF5XKSA1 Specifications

  • 55b18700f05822c99215921d3c8583b7:Active
  • IGBT Type:Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):80 A
  • Current - Collector Pulsed (Icm):150 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 50A
  • Power - Max:250 W
  • Switching Energy:310µJ (on), 120µJ (off)
  • Input Type:Standard
  • Gate Charge:109 nC
  • Td (on/off) @ 25°C:20ns/156ns
  • Test Condition:400V, 25A, 12Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:PG-TO247-3

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