AIGB15N65H5ATMA1

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Manufacturer Part
AIGB15N65H5ATMA1
Manufacturer
IR (Infineon Technologies)
Description
DISCRETE SWITCHES
Category
Discrete Semiconductor Products
Family
Transistors - IGBTs - Single
Series
-
In Stock
30487
Datasheets
-

AIGB15N65H5ATMA1 Specifications

  • 55b18700f05822c99215921d3c8583b7:Active
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):650 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):45 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 15A
  • Power - Max:105 W
  • Switching Energy:0.16mJ (on), 0.04mJ (off)
  • Input Type:Standard
  • Gate Charge:40 nC
  • Td (on/off) @ 25°C:24ns/22ns
  • Test Condition:400V, 7.5A, 39Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-40°C ~ 175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package:PG-TO263-3-2

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