FDMC5614P-B8 Specifications

• 55b18700f05822c99215921d3c8583b7:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:5.7A (Ta), 13.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:100mOhm @ 5.7A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:20 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1055 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):2.1W (Ta), 42W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-WDFN (3.3x3.3)
• Package / Case:8-PowerWDFN