CMS15P03Q8A-HF Specifications

• 55b18700f05822c99215921d3c8583b7:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:12mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:21.5 nC @ 4.5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2129 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta), 4.5W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOP
• Package / Case:8-SOIC (0.154", 3.90mm Width)