FDD3860-G Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:6.2A (Ta), 29A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:36mOhm @ 5.9A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:31 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1740 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):3.75W (Ta), 83W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-252, (D-Pak)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63