FDS6680A-NBBI005A Specifications

• 55b18700f05822c99215921d3c8583b7:Last Time Buy
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:12.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:9.5mOhm @ 12.5A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:23 nC @ 5 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1620 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-SOIC
• Package / Case:8-SOIC (0.154", 3.90mm Width)