CSD17313Q2Q1T Specifications

• 55b18700f05822c99215921d3c8583b7:Not For New Designs
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):3V, 8V
• Rds On (Max) @ Id, Vgs:30mOhm @ 4A, 8V
• Vgs(th) (Max) @ Id:1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:2.7 nC @ 4.5 V
• Vgs (Max):+10V, -8V
• Input Capacitance (Ciss) (Max) @ Vds:340 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):2.4W (Ta), 17W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:6-WSON (2x2)
• Package / Case:6-WDFN Exposed Pad