C3M0040120J1 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:64A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:53.5mOhm @ 33.3A, 15V
• Vgs(th) (Max) @ Id:3.6V @ 9.2mA
• Gate Charge (Qg) (Max) @ Vgs:94 nC @ 15 V
• Vgs (Max):+15V, -4V
• Input Capacitance (Ciss) (Max) @ Vds:2900 pF @ 1000 V
• FET Feature:-
• Power Dissipation (Max):272W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263-7
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA