DMT12H060LFDF-7 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):115 V
• Current - Continuous Drain (Id) @ 25°C:4.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
• Rds On (Max) @ Id, Vgs:65mOhm @ 3A, 4.5V
• Vgs(th) (Max) @ Id:1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:7.8 nC @ 4.5 V
• Vgs (Max):±8V
• Input Capacitance (Ciss) (Max) @ Vds:475 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):1.1W (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:U-DFN2020-6 (Type F)
• Package / Case:6-UDFN Exposed Pad