NTTFS022N15MC Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):150 V
• Current - Continuous Drain (Id) @ 25°C:7.4A (Ta), 37.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):8V, 10V
• Rds On (Max) @ Id, Vgs:22mOhm @ 18A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1315 pF @ 75 V
• FET Feature:-
• Power Dissipation (Max):1.2W (Ta), 71.4W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-PQFN (3.3x3.3)
• Package / Case:8-PowerWDFN