NTTFS115P10M5 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:2A (Ta), 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:120mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id:4V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs:9.2 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:637 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):900mW (Ta), 41W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-WDFN (3.3x3.3)
• Package / Case:8-PowerWDFN