FDV304P-F169 Specifications

• 55b18700f05822c99215921d3c8583b7:Last Time Buy
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):25 V
• Current - Continuous Drain (Id) @ 25°C:460mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On):2.7V, 4.5V
• Rds On (Max) @ Id, Vgs:1.1Ohm @ 500mA, 4.5V
• Vgs(th) (Max) @ Id:1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:1.5 nC @ 4.5 V
• Vgs (Max):-8V
• Input Capacitance (Ciss) (Max) @ Vds:63 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):350mW (Ta)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:SOT-23-3
• Package / Case:TO-236-3, SC-59, SOT-23-3