NVMYS1D6N04CLT1G Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:35A (Ta), 185A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:1.6mOhm @ 50A, 10V
• Vgs(th) (Max) @ Id:3V @ 210µA
• Gate Charge (Qg) (Max) @ Vgs:71 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:4301 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):3.8W (Ta), 107.1W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK4 (5x6)
• Package / Case:SOT-1023, 4-LFPAK