RBA250N10CHPF-4UA02#GB0 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:250A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:2.4mOhm @ 125A, 10V
• Vgs(th) (Max) @ Id:3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:190 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:9500 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):1.8W (Ta), 348W (Tc)
• Operating Temperature:175°C
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263-7
• Package / Case:TO-263-7, D²Pak (6 Leads + Tab), TO-263CB