DMT6012LPSW-13 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:13.1A (Ta), 31.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:12mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:22.2 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1522 pF @ 30 V
• FET Feature:-
• Power Dissipation (Max):3.1W (Ta), 17.9W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount, Wettable Flank
• Supplier Device Package:PowerDI5060-8 (Type UX)
• Package / Case:8-PowerTDFN