G3R12MT12K Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss):1200 V
• Current - Continuous Drain (Id) @ 25°C:157A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V, 18V
• Rds On (Max) @ Id, Vgs:13mOhm @ 100A, 18V
• Vgs(th) (Max) @ Id:2.7V @ 50mA
• Gate Charge (Qg) (Max) @ Vgs:288 nC @ 15 V
• Vgs (Max):+22V, -10V
• Input Capacitance (Ciss) (Max) @ Vds:9335 pF @ 800 V
• FET Feature:-
• Power Dissipation (Max):567W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Through Hole
• Supplier Device Package:TO-247-4
• Package / Case:TO-247-4