NVDS015N15MCT4G Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):150 V
• Current - Continuous Drain (Id) @ 25°C:10.5A (Ta), 61.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:15mOhm @ 29A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 162µA
• Gate Charge (Qg) (Max) @ Vgs:27 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2120 pF @ 75 V
• FET Feature:-
• Power Dissipation (Max):3.1W (Ta), 107.1W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63