MCU60N02-TP Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):20 V
• Current - Continuous Drain (Id) @ 25°C:60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
• Rds On (Max) @ Id, Vgs:6mOhm @ 20A, 4.5V
• Vgs(th) (Max) @ Id:1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:65 nC @ 4.5 V
• Vgs (Max):±10V
• Input Capacitance (Ciss) (Max) @ Vds:2450 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):35W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:DPAK (TO-252)
• Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63