NTMFS0D55N03CGT1G Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:35A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:580µOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 330µA
• Gate Charge (Qg) (Max) @ Vgs:224.9 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:18500 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):1.1W (Ta)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN, 5 Leads