UJ4SC075011B7S Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:P-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):750 V
• Current - Continuous Drain (Id) @ 25°C:104A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):12V
• Rds On (Max) @ Id, Vgs:14.2mOhm @ 60A, 12V
• Vgs(th) (Max) @ Id:5.5V @ 10mA
• Gate Charge (Qg) (Max) @ Vgs:75 nC @ 15 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3245 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):357W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK-7
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA