2SJ328-Z-E1-AZ Specifications

• 55b18700f05822c99215921d3c8583b7:Obsolete
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4V, 10V
• Rds On (Max) @ Id, Vgs:60mOhm @ 10A, 10V
• Vgs(th) (Max) @ Id:2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:85 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:2150 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):1.5W (Ta), 75W (Tc)
• Operating Temperature:150°C
• Mounting Type:Surface Mount
• Supplier Device Package:TO-220SMD
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB