NVMYS029N08LHTWG Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):80 V
• Current - Continuous Drain (Id) @ 25°C:7A (Ta), 22A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:29mOhm @ 5A, 10V
• Vgs(th) (Max) @ Id:2V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs:9 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:431 pF @ 40 V
• FET Feature:-
• Power Dissipation (Max):3.5W (Ta), 33W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:LFPAK4 (5x6)
• Package / Case:SOT-1023, 4-LFPAK