IXTT110N10L2-TRL Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:18mOhm @ 55A, 10V
• Vgs(th) (Max) @ Id:4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:260 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:10500 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):600W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-268 (IXTT)
• Package / Case:TO-268-3, D³Pak (2 Leads + Tab), TO-268AA