NVTFWS015P03P8ZTAG Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):30 V
• Current - Continuous Drain (Id) @ 25°C:17A (Ta), 88.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:7.5mOhm @ 12A, 10V
• Vgs(th) (Max) @ Id:3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:105 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:2706 pF @ 15 V
• FET Feature:-
• Power Dissipation (Max):3.2W (Ta), 88.2W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-WDFN (3.3x3.3)
• Package / Case:8-PowerWDFN