TP65H050G4BS Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:GaNFET (Gallium Nitride)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:34A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):10V
• Rds On (Max) @ Id, Vgs:60mOhm @ 22A, 10V
• Vgs(th) (Max) @ Id:4.8V @ 700µA
• Gate Charge (Qg) (Max) @ Vgs:24 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:1000 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):119W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB