C3M0045065J1 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss):650 V
• Current - Continuous Drain (Id) @ 25°C:47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):15V
• Rds On (Max) @ Id, Vgs:60mOhm @ 17.6A, 15V
• Vgs(th) (Max) @ Id:3.6V @ 4.84mA
• Gate Charge (Qg) (Max) @ Vgs:61 nC @ 15 V
• Vgs (Max):+19V, -8V
• Input Capacitance (Ciss) (Max) @ Vds:1621 pF @ 400 V
• FET Feature:-
• Power Dissipation (Max):147W (Tc)
• Operating Temperature:-40°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:TO-263-7
• Package / Case:TO-263-8, D²Pak (7 Leads + Tab), TO-263CA