DMT15H017LPSW-13 Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):150 V
• Current - Continuous Drain (Id) @ 25°C:9.4A (Ta), 58A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:17.5mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:50 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:3369 pF @ 75 V
• FET Feature:-
• Power Dissipation (Max):1.3W (Ta), 89W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount, Wettable Flank
• Supplier Device Package:PowerDI5060-8 (Type UX)
• Package / Case:8-PowerTDFN