NVMFWS2D3P04M8LT1G Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:31A (Ta), 222A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2.2mOhm @ 30A, 10V
• Vgs(th) (Max) @ Id:2.4V @ 2.7mA
• Gate Charge (Qg) (Max) @ Vgs:157 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5985 pF @ 20 V
• FET Feature:-
• Power Dissipation (Max):3.8W (Ta), 205W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:5-DFN (5x6) (8-SOFL)
• Package / Case:8-PowerTDFN, 5 Leads