FDMS86163P-23507X Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:7.9A (Ta), 50A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):6V, 10V
• Rds On (Max) @ Id, Vgs:22mOhm @ 7.9A, 10V
• Vgs(th) (Max) @ Id:4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:59 nC @ 10 V
• Vgs (Max):±25V
• Input Capacitance (Ciss) (Max) @ Vds:4085 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):2.5W (Ta), 104W (Tc)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:8-PQFN (5x6)
• Package / Case:8-PowerTDFN