NVMFWS021N10MCLT1G Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):100 V
• Current - Continuous Drain (Id) @ 25°C:8.4A (Ta), 31A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:23mOhm @ 7A, 10V
• Vgs(th) (Max) @ Id:3V @ 42µA
• Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:850 pF @ 50 V
• FET Feature:-
• Power Dissipation (Max):3.6W (Ta), 49W (Tc)
• Operating Temperature:-55°C ~ 175°C (TJ)
• Mounting Type:Surface Mount, Wettable Flank
• Supplier Device Package:5-DFNW (4.9x5.9) (8-SOFL-WF)
• Package / Case:8-PowerTDFN, 5 Leads