MCB200N06Y-TP Specifications

• 55b18700f05822c99215921d3c8583b7:Active
• FET Type:N-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):60 V
• Current - Continuous Drain (Id) @ 25°C:200A (Tc)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:2.6mOhm @ 20A, 10V
• Vgs(th) (Max) @ Id:2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs:93 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:5950 pF @ 25 V
• FET Feature:-
• Power Dissipation (Max):260W (Tj)
• Operating Temperature:-55°C ~ 150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:D2PAK
• Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB