BFG35,115

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Manufacturer Part
BFG35,115
Manufacturer
NXP Semiconductors
Description
RF TRANS NPN 18V 4GHZ SOT223
Category
Discrete Semiconductor Products
Family
Transistors - Bipolar (BJT) - RF
Series
-
In Stock
0
Datasheets
-

BFG35,115 Specifications

  • Series:-
  • Package:Tape & Reel (TR)Cut Tape (CT)
  • Part Status:Obsolete
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):18V
  • Frequency - Transition:4GHz
  • Noise Figure (dB Typ @ f):-
  • Gain:-
  • Power - Max:1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce:25 @ 100mA, 10V
  • Current - Collector (Ic) (Max):150mA
  • Operating Temperature:175°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-261-4, TO-261AA
  • Supplier Device Package:SOT-223

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