1N8030-GA

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Manufacturer Part
1N8030-GA
Manufacturer
GeneSiC Semiconductor
Description
DIODE SCHOTTKY 650V 750MA TO257
Category
Discrete Semiconductor Products
Family
Diodes - Rectifiers - Single
Series
-
In Stock
0
Datasheets
-

1N8030-GA Specifications

  • Series:-
  • Package:Tube
  • Part Status:Obsolete
  • Diode Type:Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max):650 V
  • Current - Average Rectified (Io):750mA
  • Voltage - Forward (Vf) (Max) @ If:1.39 V @ 750 mA
  • Speed:No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr):0 ns
  • Current - Reverse Leakage @ Vr:5 µA @ 650 V
  • Capacitance @ Vr, F:76pF @ 1V, 1MHz
  • Mounting Type:Through Hole
  • Package / Case:TO-257-3
  • Supplier Device Package:TO-257
  • Operating Temperature - Junction:-55°C ~ 250°C

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