TPCP8103-H(TE85LFM Specifications

• Series:U-MOSIII-H
• Package:Tape & Reel (TR)Cut Tape (CT)
• Part Status:Last Time Buy
• FET Type:P-Channel
• Technology:MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss):40 V
• Current - Continuous Drain (Id) @ 25°C:4.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
• Rds On (Max) @ Id, Vgs:40mOhm @ 2.4A, 10V
• Vgs(th) (Max) @ Id:2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs:19 nC @ 10 V
• Vgs (Max):±20V
• Input Capacitance (Ciss) (Max) @ Vds:800 pF @ 10 V
• FET Feature:-
• Power Dissipation (Max):840mW (Ta)
• Operating Temperature:150°C (TJ)
• Mounting Type:Surface Mount
• Supplier Device Package:PS-8 (2.9x2.4)
• Package / Case:8-SMD, Flat Lead